Publication:

Effect of ammonium halide salts on wet chemical nanoscale etching and polishing of InGaAs surfaces for advanced CMOS devices

Date

2023
Journal article
https://doi.org/10.1016/j.mssp.2023.107469
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dc.contributor.authorSamanta, Suprakash
dc.contributor.authorJin, Seungwan
dc.contributor.authorLee, Chan-Hee
dc.contributor.authorLee, Seong-Soo
dc.contributor.authorStruyf, Herbert
dc.contributor.authorKim, Tae-Gon
dc.contributor.authorPark, Jin-Goo
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.orcidimecStruyf, Herbert::0000-0002-6782-5424
dc.date.accessioned2023-11-06T11:00:36Z
dc.date.available2023-08-02T17:18:15Z
dc.date.available2023-11-06T11:00:36Z
dc.date.issued2023
dc.identifier.doi10.1016/j.mssp.2023.107469
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42256
dc.publisherELSEVIER SCI LTD
dc.source.beginpageArt. 07469
dc.source.endpagena
dc.source.issueJuly
dc.source.journalMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.source.numberofpages11
dc.source.volume161
dc.subject.keywordsHYDROGEN-PEROXIDE
dc.subject.keywordsINP
dc.subject.keywordsREMOVAL
dc.subject.keywordsGAAS
dc.subject.keywordsSI
dc.subject.keywordsIN0.53GA0.47AS
dc.subject.keywordsSEMICONDUCTORS
dc.subject.keywordsQUALITY
dc.subject.keywordsSILICON
dc.subject.keywordsGE
dc.title

Effect of ammonium halide salts on wet chemical nanoscale etching and polishing of InGaAs surfaces for advanced CMOS devices

dc.typeJournal article
dspace.entity.typePublication
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