Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

dc.contributor.author	Martino, Marcio D.V.
dc.contributor.author	Martino, Joao A.
dc.contributor.author	Agopian, Paula G.D.
dc.contributor.author	Vandooren, Anne
dc.contributor.author	Rooyackers, Rita
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Vandooren, Anne
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Vandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-24T08:55:08Z
dc.date.available	2021-10-24T08:55:08Z
dc.date.issued	2017
dc.identifier.issn	0268-1242
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/28937
dc.identifier.url	http://iopscience.iop.org/article/10.1088/1361-6641/aa6764
dc.source.beginpage	55015
dc.source.issue	5
dc.source.journal	Semiconductor Science and Technology
dc.source.volume	32
dc.title	Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
dc.type	Journal article
dspace.entity.type	Publication
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