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Conference contributions
N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C
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N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Meunier-Beillard, Philippe
;
Caymax, Matty
;
Van Nieuwenhuysen, Kris
;
Doumen, Geert
;
Brijs, Bert
;
Hopstaken, M.
;
Geenen, Luc
;
Vandervorst, Wilfried
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Views
2311
since deposited on 2021-10-15
4
last month
1
last week
Acq. date: 2025-12-10
Citations