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Developing a full wafer-scale approach towards high ALD selectivity on copper vs low-K (and oxides) using a single ALD/SAMS platform

Date

2017
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dc.contributor.authorLecordier, Laurent
dc.contributor.authorArmini, Silvia
dc.contributor.authorHerregods, Sebastiaan
dc.contributor.imecauthorArmini, Silvia
dc.contributor.imecauthorHerregods, Sebastiaan
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.date.accessioned2021-10-24T07:35:41Z
dc.date.available2021-10-24T07:35:41Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28772
dc.identifier.urlhttps://aldconference.avs.org/wp-content/uploads/2017/05/ALD-Tech-Program-4.7-1.pdf
dc.source.conferenceAVS 17th International Conference on Atomic Layer Deposition - ALD
dc.source.conferencedate15/07/2017
dc.source.conferencelocationDenver, CO USA
dc.title

Developing a full wafer-scale approach towards high ALD selectivity on copper vs low-K (and oxides) using a single ALD/SAMS platform

dc.typeMeeting abstract
dspace.entity.typePublication
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