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Relation between Raman frequency and stress in Si for surface and cross-section experiments in microelectronics components
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Relation between Raman frequency and stress in Si for surface and cross-section experiments in microelectronics components
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Date
2015
Journal article
https://doi.org/10.1063/1.4927133
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
De Wolf, Ingrid
Journal
Journal of Applied Physics
Abstract
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1851
since deposited on 2021-10-22
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Acq. date: 2025-12-15
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Metrics
Views
1851
since deposited on 2021-10-22
3
last month
1
last week
Acq. date: 2025-12-15
Citations