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Deep-level transient spectroscopy of MOS capacitors on GeSn epitaxial layers

Date

2012
Meeting abstract
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorVincent, Benjamin
dc.contributor.authorMerckling, Clement
dc.contributor.authorGencarelli, Federica
dc.contributor.authorChu, L-K
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-20T16:12:10Z
dc.date.available2021-10-20T16:12:10Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21518
dc.source.beginpage2649
dc.source.conferenceECS Fall Meeting Symposium E6: High Purity Silicon 12
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
dc.title

Deep-level transient spectroscopy of MOS capacitors on GeSn epitaxial layers

dc.typeMeeting abstract
dspace.entity.typePublication
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