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A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories

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dc.contributor.authorGoux, Ludovic
dc.contributor.authorHurkx, Fred
dc.contributor.authorWang, Xin Peng
dc.contributor.authorDelhougne, Romain
dc.contributor.authorAttenborough, Karen
dc.contributor.authorGravesteijn, Dirk
dc.contributor.authorWouters, Dirk
dc.contributor.authorPerez Gonzalez, Jesus
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-18T16:40:26Z
dc.date.available2021-10-18T16:40:26Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17176
dc.identifier.urlhttp://ieeexplore.ieee.org/search/freesearchresult.jsp?newsearch=true&queryText=2066953&filter=
dc.source.beginpage1287
dc.source.endpage1289
dc.source.issue11
dc.source.journalIEEE Electron Device Letters
dc.source.volume31
dc.title

A novel method for extracting the temperature-dependent crystal-growth parameters in fast-growth phase-change memories

dc.typeJournal article
dspace.entity.typePublication
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