Publication:

InAs/(GaIn)Sb superlattices for mid-IR optoelectronics: strain optimization by controlled interface formation

Date

1998
Journal article
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dc.contributor.authorWagner, J.
dc.contributor.authorSchmitz, Jurriaan
dc.contributor.authorHerres, N.
dc.contributor.authorFuchs, F.
dc.contributor.authorSerries, D.
dc.contributor.authorGrietens, Bob
dc.contributor.authorNemeth, Stefan
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-01T09:43:46Z
dc.date.available2021-10-01T09:43:46Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3140
dc.source.beginpage320
dc.source.endpage324
dc.source.journalPhysica E: Low-Dimensional Systems & Nanostructures
dc.source.volume2
dc.title

InAs/(GaIn)Sb superlattices for mid-IR optoelectronics: strain optimization by controlled interface formation

dc.typeJournal article
dspace.entity.typePublication
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