Publication:
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
Date
| dc.contributor.author | Werquin, M. | |
| dc.contributor.author | Vellas, N. | |
| dc.contributor.author | Guhel, Y. | |
| dc.contributor.author | Ducatteau, D. | |
| dc.contributor.author | Boudart, B. | |
| dc.contributor.author | Pesant, J.C. | |
| dc.contributor.author | Bougrioua, Z. | |
| dc.contributor.author | Germain, Marianne | |
| dc.contributor.author | de Jaeger, J.C. | |
| dc.contributor.author | Gaquiere, C. | |
| dc.date.accessioned | 2021-10-16T07:07:05Z | |
| dc.date.available | 2021-10-16T07:07:05Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/11553 | |
| dc.source.beginpage | 311 | |
| dc.source.endpage | 315 | |
| dc.source.issue | 4 | |
| dc.source.journal | Microwave and Optical Technology Letters | |
| dc.source.volume | 46 | |
| dc.title | First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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