Publication:

Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devices

Date

2019
Presentation
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dc.contributor.authorLoo, Roger
dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorSchaekers, Marc
dc.contributor.authorCapogreco, Elena
dc.contributor.authorShimura, Yosuke
dc.contributor.authorKohen, David
dc.contributor.authorTolle, John
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-27T12:57:49Z
dc.date.available2021-10-27T12:57:49Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33475
dc.source.conferencetalk at Nagoya University
dc.source.conferencedate23/05/2019
dc.source.conferencelocationNagoya Japan
dc.title

Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devices

dc.typeOral presentation
dspace.entity.typePublication
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