Publication:

The Intermixing Study of Cu/Ru Interface in Dual-damascene Scheme for Advanced Interconnect

Date

2025
Proceedings Paper
https://doi.org/10.1109/IITC66087.2025.11075453
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dc.contributor.authorNoh, Sunyoung
dc.contributor.authorKim, Yeonuk
dc.contributor.authorPark, Seongho
dc.contributor.authorVarela Pedreira, Olalla
dc.contributor.authorBuccheri, Nunzio
dc.contributor.authorKong, Myungho
dc.contributor.authorKim, Hana
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorJung, Eunji
dc.contributor.authorHong, Jungpyo
dc.contributor.authorKim, Juhyun
dc.contributor.authorTokei, Zsolt
dc.contributor.authorKim, Rak-Hwan
dc.contributor.authorLee, Seung Hun
dc.contributor.authorHyun, Sangjin
dc.contributor.authorSong, Jaihyuk
dc.date.accessioned2026-04-13T14:56:07Z
dc.date.available2026-04-13T14:56:07Z
dc.date.createdwos2025-10-18
dc.date.issued2025
dc.description.abstractVarious novel technologies for Cu metallization were used to achieve barrier or liner less at via bottom. It was demonstrated that barrier thickness at via bottom is more important contributor to the via resistance, compared to the liner thickness. In terms of the integration for both Cu extension and alternative conductor interconnects, the interface issues between Mx+Vx-1 Cu and Mx-1 Ru were studied by ET measurement and the package-level EM reliability tests. The results confirmed that Mx+Vx-1 Cu dual-damascene metallization used in this works is very robust and healthy and also very stable properties of Mx-1 Ru does not cause the intermixing or diffusion at interfaces.
dc.identifier.doi10.1109/IITC66087.2025.11075453
dc.identifier.isbn979-8-3315-3782-1
dc.identifier.issn2380-632X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59072
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceIEEE International Interconnect Technology Conference (IITC)
dc.source.conferencedate2025-06-02
dc.source.conferencelocationBusan
dc.source.journal2025 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC
dc.source.numberofpages3
dc.title

The Intermixing Study of Cu/Ru Interface in Dual-damascene Scheme for Advanced Interconnect

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
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