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Ge1-xSnx stressors for strained-Ge CMOS

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dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorShimura, Yosuke
dc.contributor.authorNishimura, Tsuyoshi
dc.contributor.authorVincent, Benjamin
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeulemeester, Jelle
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T22:11:36Z
dc.date.available2021-10-18T22:11:36Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18066
dc.source.conference5th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate24/05/2010
dc.source.conferencelocationStockholm Sweden
dc.title

Ge1-xSnx stressors for strained-Ge CMOS

dc.typeMeeting abstract
dspace.entity.typePublication
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