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Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy
Publication:
Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy
Date
1999
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
McNally, P. J.
;
Curley, J. W.
;
Bolt, M.
;
Reader, A.
;
Tuomi, T.
;
Rantamaki, R.
;
Danilewsky, A. N.
;
De Wolf, Ingrid
Journal
J. Materials Science: Materials in Electronics
Abstract
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1908
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1908
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations