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Monolithically integrated coplanar stripline and InAlAs/InGaAs modulation-doped field-effect transistors with 4.2 ps switching time and 3.2 ps delay

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dc.contributor.authorZeng, A.
dc.contributor.authorJackson, M. K.
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Raedt, Walter
dc.contributor.imecauthorDe Raedt, Walter
dc.date.accessioned2021-09-29T13:27:51Z
dc.date.available2021-09-29T13:27:51Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1040
dc.source.beginpage363
dc.source.conferenceCLEO `95.Summaries of Papers Presented at the Conference on Lasers and Electro-Optics; 22-26 May 1995; Baltimore, MA, USA.
dc.source.conferencelocation
dc.source.endpage4
dc.title

Monolithically integrated coplanar stripline and InAlAs/InGaAs modulation-doped field-effect transistors with 4.2 ps switching time and 3.2 ps delay

dc.typeProceedings paper
dspace.entity.typePublication
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