Publication:

Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

Date

2014
Proceedings Paper
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dc.contributor.authorJiang, Sijia
dc.contributor.authorMerckling, Clement
dc.contributor.authorMoussa, Alain
dc.contributor.authorGuo, Weiming
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBarla, Kathy
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSeefeldt, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T02:22:10Z
dc.date.available2021-10-22T02:22:10Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24012
dc.identifier.urlhttp://ecst.ecsdl.org/content/64/6/501.abstract
dc.source.beginpage501
dc.source.conferenceSiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.source.endpage511
dc.title

Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

dc.typeProceedings paper
dspace.entity.typePublication
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