Publication:

On the gradual unipolar and bipolar resistive switching of TiN\HfO2\Pt memory systems

Date

2010
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorGoux, Ludovic
dc.contributor.authorChen, Yangyin
dc.contributor.authorPantisano, Luigi
dc.contributor.authorWang, Xin Peng
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.authorWouters, Dirk
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-18T16:39:32Z
dc.date.available2021-10-18T16:39:32Z
dc.date.issued2010
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17173
dc.source.beginpageG54
dc.source.endpageG56
dc.source.issue6
dc.source.journalElectrochemical and Solid-State Letters
dc.source.volume13
dc.title

On the gradual unipolar and bipolar resistive switching of TiN\HfO2\Pt memory systems

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles