Publication:
High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition
Date
| dc.contributor.author | Ramesh, Anisha | |
| dc.contributor.author | Berger, Paul | |
| dc.contributor.author | Loo, Roger | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.date.accessioned | 2021-10-20T15:06:17Z | |
| dc.date.available | 2021-10-20T15:06:17Z | |
| dc.date.issued | 2012-02 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/21376 | |
| dc.source.beginpage | 92104 | |
| dc.source.issue | 9 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 100 | |
| dc.title | High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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