Publication:

Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates

Date

2014
Journal article
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dc.contributor.authorScalise, Emilio
dc.contributor.authorHoussa, Michel
dc.contributor.authorCinquanta, Emilio
dc.contributor.authorGrazianetti, Caludio
dc.contributor.authorVan den Broek, Bas
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorStesmans, Andre
dc.contributor.authorFanciulli, Marco
dc.contributor.authorMolle, Allessandro
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-22T05:31:06Z
dc.date.available2021-10-22T05:31:06Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn2053-1583
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24485
dc.identifier.urlhttp://iopscience.iop.org/2053-1583/1/1/011010/article
dc.source.beginpage11010
dc.source.issue1
dc.source.journal2D Materials
dc.source.volume1
dc.title

Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates

dc.typeJournal article
dspace.entity.typePublication
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