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Significant reduction of positive bias temperature instability in high-k/metal-gate nFETs by incorporation of rare earth metals
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Significant reduction of positive bias temperature instability in high-k/metal-gate nFETs by incorporation of rare earth metals
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Date
2009
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kaczer, Ben
;
Veloso, Anabela
;
Aoulaiche, Marc
;
Groeseneken, Guido
Journal
Microelectronic Engineering
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Views
1767
since deposited on 2021-10-17
4
last month
3
last week
Acq. date: 2026-08-04
Citations