Publication:

Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs

Date

2017
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorVais, Abhitosh
dc.contributor.authorSioncke, Sonja
dc.contributor.authorWaldron, Niamh
dc.contributor.authorZhou, Daisy
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGrasser, Tibor
dc.contributor.authorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-24T04:48:32Z
dc.date.available2021-10-24T04:48:32Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28349
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8268347/
dc.source.beginpage175
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate2/12/2017
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage178
dc.title

Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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