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Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface
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Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface
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Date
1999
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lukyanchikova, N. B.
;
Petrichuk, M. V.
;
Garbar, N. P.
;
Simoen, Eddy
;
Claeys, Cor
Journal
Semiconductor Science and Technology
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1972
since deposited on 2021-10-14
1
last month
Acq. date: 2025-12-11
Citations
Metrics
Views
1972
since deposited on 2021-10-14
1
last month
Acq. date: 2025-12-11
Citations