Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface

Publication:

1999

Journal article

Author(s)

;

;

;

;

Semiconductor Science and Technology

1972 since deposited on 2021-10-14

Acq. date: 2026-01-26