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Characterization of tunnel oxides for non-volatile memory (NVM) applications

Date

2003
Proceedings Paper
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dc.contributor.authorAckaert, Jan
dc.contributor.authorVermeulen, Tom
dc.contributor.authorLowe, Antony
dc.contributor.authorBoonen, Sylvie
dc.contributor.authorYao, Thierry
dc.contributor.authorPrasad, Jagdish
dc.contributor.authorThomason, Mike
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorHendrickx, Paul
dc.contributor.imecauthorAckaert, Jan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-15T03:58:33Z
dc.date.available2021-10-15T03:58:33Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7116
dc.source.beginpage33
dc.source.conferenceProceedings International Semiconductor Device Research Symposium
dc.source.conferencedate10/12/2003
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage34
dc.title

Characterization of tunnel oxides for non-volatile memory (NVM) applications

dc.typeProceedings paper
dspace.entity.typePublication
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