Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures

dc.contributor.author	Tyaginov, Stanislav
dc.contributor.author	Makarov, Alexander
dc.contributor.author	Jech, Markus
dc.contributor.author	Vexler, Mikhail
dc.contributor.author	Franco, Jacopo
dc.contributor.author	Kaczer, Ben
dc.contributor.author	Grasser, Tibor
dc.contributor.imecauthor	Tyaginov, Stanislav
dc.contributor.imecauthor	Franco, Jacopo
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.orcidimec	Franco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.date.accessioned	2021-10-26T06:06:41Z
dc.date.available	2021-10-26T06:06:41Z
dc.date.issued	2018-02
dc.identifier.issn	1063-7826
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/31986
dc.identifier.url	https://doi.org/10.1134/S1063782618020203
dc.source.beginpage	242
dc.source.endpage	247
dc.source.issue	2
dc.source.journal	Semiconductors
dc.source.volume	52
dc.title	Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
dc.type	Journal article
dspace.entity.type	Publication
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