Method to quantify the delocalization of the electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors

dc.contributor.author	de Jamblinne de Meux, Albert
dc.contributor.author	Pourtois, Geoffrey
dc.contributor.author	Genoe, Jan
dc.contributor.author	Heremans, Paul
dc.contributor.imecauthor	Pourtois, Geoffrey
dc.contributor.imecauthor	Genoe, Jan
dc.contributor.imecauthor	Heremans, Paul
dc.contributor.orcidimec	Pourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimec	Genoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimec	Heremans, Paul::0000-0003-2151-1718
dc.date.accessioned	2021-10-25T17:42:34Z
dc.date.available	2021-10-25T17:42:34Z
dc.date.issued	2018
dc.identifier.issn	1098-0121
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/30526
dc.identifier.url	https://link.aps.org/doi/10.1103/PhysRevB.97.045208
dc.source.beginpage	45208
dc.source.issue	4
dc.source.journal	Physical Review B
dc.source.volume	97
dc.title	Method to quantify the delocalization of the electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors
dc.type	Journal article
dspace.entity.type	Publication
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