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Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

Date

2013
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dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRoussel, Philippe
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.date.accessioned2021-10-21T12:47:03Z
dc.date.available2021-10-21T12:47:03Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23174
dc.source.beginpage164
dc.source.conference18th Conference of Insulting Films on Semiconductors - INFOS: Book of Abstracts
dc.source.conferencedate25/06/2013
dc.source.conferencelocationCracow Poland
dc.source.endpage165
dc.title

Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

dc.typeMeeting abstract
dspace.entity.typePublication
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