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Formation of epitaxial CoSi2 by a Cr or Mo interlayer: comparison with a Ti interlayer

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dc.contributor.authorDetavernier, C.
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorCardon, F.
dc.contributor.authorMaex, Karen
dc.contributor.authorBender, Hugo
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-14T16:51:05Z
dc.date.available2021-10-14T16:51:05Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5249
dc.source.beginpage2146
dc.source.endpage2150
dc.source.issue4
dc.source.journalJournal of Applied Physics
dc.source.volume89
dc.title

Formation of epitaxial CoSi2 by a Cr or Mo interlayer: comparison with a Ti interlayer

dc.typeJournal article
dspace.entity.typePublication
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