Publication:

Electrical assessment of gate oxide punchthrough in advanced polysilicon high density plasma etch.

Date

1999
Proceedings Paper
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dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorBeckx, Stephan
dc.contributor.authorDupas, Luc
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorDeferm, Ludo
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorDupas, Luc
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.accessioned2021-10-14T11:46:00Z
dc.date.available2021-10-14T11:46:00Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3912
dc.source.beginpage54
dc.source.conference1st European Symposium on Plasma Process Induced Damage - ESPID1
dc.source.conferencedate25/11/1999
dc.source.conferencelocationToulouse France
dc.source.endpage57
dc.title

Electrical assessment of gate oxide punchthrough in advanced polysilicon high density plasma etch.

dc.typeProceedings paper
dspace.entity.typePublication
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