Publication:
Improved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition
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1896 since deposited on 2021-10-19
1last month
Acq. date: 2026-04-05
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Views
1896 since deposited on 2021-10-19
1last month
Acq. date: 2026-04-05
Citations