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Improved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition
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Improved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Molle, Alessandro
;
Lamagna, Luca
;
Wiemer, Claudia
;
Spiga, Sabina
;
Fanciulli, Marco
;
Merckling, Clement
;
Brammertz, Guy
;
Caymax, Matty
Journal
Applied Physics Express
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1892
since deposited on 2021-10-19
Acq. date: 2025-12-09
Citations
Metrics
Views
1892
since deposited on 2021-10-19
Acq. date: 2025-12-09
Citations