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Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gates

Date

2005
Journal article
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dc.contributor.authorShamiryan, Denis
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorBeckx, Stephan
dc.contributor.authorBoullart, Werner
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.accessioned2021-10-16T04:59:57Z
dc.date.available2021-10-16T04:59:57Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11193
dc.source.beginpage2194
dc.source.endpage2197
dc.source.issue5
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.volume23
dc.title

Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gates

dc.typeJournal article
dspace.entity.typePublication
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