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Epitaxial Ge Growth in Ultra Narrow STI Patterned Si Wafer

Date

2015
Meeting abstract
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorSun, Jianwu
dc.contributor.authorShimura, Yosuke
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T19:42:27Z
dc.date.available2021-10-22T19:42:27Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25385
dc.source.conferenceEMRS Fall Meeting Symposium O: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Appl.
dc.source.conferencedate15/09/2015
dc.source.conferencelocationWarsaw Poland
dc.title

Epitaxial Ge Growth in Ultra Narrow STI Patterned Si Wafer

dc.typeMeeting abstract
dspace.entity.typePublication
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