Publication:

Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

Date

2011
Journal article
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dc.contributor.authorWang, Gang
dc.contributor.authorLeys, Maarten
dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorBrammertz, Guy
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorDekoster, Johan
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-19T21:38:43Z
dc.date.available2021-10-19T21:38:43Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20129
dc.source.beginpage32
dc.source.endpage36
dc.source.issue1
dc.source.journalJournal of Crystal Growth
dc.source.volume315
dc.title

Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

dc.typeJournal article
dspace.entity.typePublication
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