Publication:

Valence band energy shift in SiGe quantum wells grown in SiO2 by using the condensation technique

Date

 
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorSouriau, Laurent
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T21:17:20Z
dc.date.available2021-10-17T21:17:20Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14881
dc.source.conferenceE-MRS Spring Meeting Symposium I: Silicon and Germanium Issues for Future CMOS Devices
dc.source.conferencedate8/06/2009
dc.source.conferencelocationStrasbourg France
dc.title

Valence band energy shift in SiGe quantum wells grown in SiO2 by using the condensation technique

dc.typeMeeting abstract
dspace.entity.typePublication
Files
Publication available in collections: