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Radiation-induced deep levels in lead and tin doped n-type czochralski silicon

Date

2004
Proceedings Paper
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dc.contributor.authorDavid, Marie-Laure
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V.
dc.contributor.authorKras'ko, M.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorVoytovych, V.
dc.contributor.authorTishchenko, V.
dc.contributor.authorBarbot, J.F.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-15T13:00:07Z
dc.date.available2021-10-15T13:00:07Z
dc.date.embargo9999-12-31
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8748
dc.source.beginpage395
dc.source.conferenceHigh Purity Silicon VIII
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage406
dc.title

Radiation-induced deep levels in lead and tin doped n-type czochralski silicon

dc.typeProceedings paper
dspace.entity.typePublication
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