Publication:

Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperatures

Date

2018
Proceedings Paper
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dc.contributor.authorBoudier, Dimitri
dc.contributor.authorCretu, Bogdan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-25T16:54:02Z
dc.date.available2021-10-25T16:54:02Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30312
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8354739/
dc.source.beginpage1
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Silicon Integration- EUROSOI-ULIS
dc.source.conferencedate19/03/2018
dc.source.conferencelocationGranada Spain
dc.source.endpage4
dc.title

Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperatures

dc.typeProceedings paper
dspace.entity.typePublication
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