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High doping density/high electric field, stress and heterojunction effects on the characteristisc of CMOS compatible p-n junctions

Date

2011
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorLuque Rodriguez, Abraham
dc.contributor.authorJimenez Tejada, J.-A.
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.accessioned2021-10-19T18:52:22Z
dc.date.available2021-10-19T18:52:22Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19786
dc.source.beginpageR27
dc.source.endpageR36
dc.source.issue5
dc.source.journalJournal of the Electrochemical Society
dc.source.volume158
dc.title

High doping density/high electric field, stress and heterojunction effects on the characteristisc of CMOS compatible p-n junctions

dc.typeJournal article
dspace.entity.typePublication
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