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S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor
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S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor
Date
2011
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sioncke, Sonja
;
Lin, Dennis
;
Nyns, Laura
;
Brammertz, Guy
;
Delabie, Annelies
;
Conard, Thierry
;
Franquet, Alexis
;
Rip, Jens
;
Struyf, Herbert
;
De Gendt, Stefan
;
Muller, Matthias
;
Beckhoff, Burkhard
;
Caymax, Matty
Journal
Journal of Applied Physics
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2041
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations
Metrics
Views
2041
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations