Publication:

High resolution X-ray diffraction for in-line monitoring of Ge MOSFET devices

Date

2015
Proceedings Paper
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dc.contributor.authorRyan, Paul
dc.contributor.authorWomington, Matthew
dc.contributor.authorSun, Jianwu
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorTielens, Hilde
dc.contributor.authorSchulze, Andreas
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T22:26:34Z
dc.date.available2021-10-22T22:26:34Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25846
dc.identifier.urlhttps://www.nist.gov/sites/default/files/documents/pml/div683/conference/FCMN_CD.pdf
dc.source.beginpage217
dc.source.conferenceInternational Conference on Frontiers of Characterization and Metrology for Nanoelectronics - FCMN
dc.source.conferencedate14/04/2015
dc.source.conferencelocationDresden Germany
dc.source.endpage219
dc.title

High resolution X-ray diffraction for in-line monitoring of Ge MOSFET devices

dc.typeProceedings paper
dspace.entity.typePublication
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