Publication:
An ionic polymer route to a stable unpinning of the Fermi level of highly doped graphene
| dc.contributor.author | Pradeepkumar, A. | |
| dc.contributor.author | Yang, Y. | |
| dc.contributor.author | Castaneda, E. | |
| dc.contributor.author | Angel, F. A. | |
| dc.contributor.author | Iacopi, F. | |
| dc.date.accessioned | 2025-06-26T03:59:34Z | |
| dc.date.available | 2025-06-26T03:59:34Z | |
| dc.date.issued | 2025-JUN 14 | |
| dc.description.wosFundingText | The authors acknowledge funding from the ARC Centre of Excellence in Transformative Meta-Optical Systems (No. CE200100010). This work was partly performed at the research prototype foundry, an Australian National Fabrication Facility at the Sydney Nanoscience Hub. The authors acknowledge facilities and the technical assistance during the device fabrication. The authors thank Professor Juan Francisco Armijo for access to the scanning electrochemical workstation, funded by project FONDEQUIP EQM150016. They thank Bryan Schwitter from Altum RF for the assistance with the RF transistor design and Meisam Esfandiari for the RF simulations in the CST Microwave Studio. | |
| dc.identifier.doi | 10.1063/5.0271357 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45845 | |
| dc.publisher | AIP Publishing | |
| dc.source.issue | 22 | |
| dc.source.journal | JOURNAL OF APPLIED PHYSICS | |
| dc.source.numberofpages | 8 | |
| dc.source.volume | 137 | |
| dc.subject.keywords | FIELD-EFFECT TRANSISTORS | |
| dc.subject.keywords | PERFORMANCE | |
| dc.subject.keywords | SILICON | |
| dc.title | An ionic polymer route to a stable unpinning of the Fermi level of highly doped graphene | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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