Publication:

An ionic polymer route to a stable unpinning of the Fermi level of highly doped graphene

Date

 
dc.contributor.authorPradeepkumar, A.
dc.contributor.authorYang, Y.
dc.contributor.authorCastaneda, E.
dc.contributor.authorAngel, F. A.
dc.contributor.authorIacopi, F.
dc.date.accessioned2025-06-26T03:59:34Z
dc.date.available2025-06-26T03:59:34Z
dc.date.issued2025-JUN 14
dc.description.wosFundingTextThe authors acknowledge funding from the ARC Centre of Excellence in Transformative Meta-Optical Systems (No. CE200100010). This work was partly performed at the research prototype foundry, an Australian National Fabrication Facility at the Sydney Nanoscience Hub. The authors acknowledge facilities and the technical assistance during the device fabrication. The authors thank Professor Juan Francisco Armijo for access to the scanning electrochemical workstation, funded by project FONDEQUIP EQM150016. They thank Bryan Schwitter from Altum RF for the assistance with the RF transistor design and Meisam Esfandiari for the RF simulations in the CST Microwave Studio.
dc.identifier.doi10.1063/5.0271357
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45845
dc.publisherAIP Publishing
dc.source.issue22
dc.source.journalJOURNAL OF APPLIED PHYSICS
dc.source.numberofpages8
dc.source.volume137
dc.subject.keywordsFIELD-EFFECT TRANSISTORS
dc.subject.keywordsPERFORMANCE
dc.subject.keywordsSILICON
dc.title

An ionic polymer route to a stable unpinning of the Fermi level of highly doped graphene

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: