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On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact

 
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2022-06-16T12:31:00Z
dc.date.available2022-05-19T02:21:23Z
dc.date.available2022-06-16T12:31:00Z
dc.date.issued2021
dc.identifier.doi10.1109/EuroSOI-ULIS53016.2021.9560186
dc.identifier.eisbn978-1-6654-3745-5
dc.identifier.issn2330-5738
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39837
dc.publisherIEEE
dc.source.conferenceJoint International EUROSOI Workshop / International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
dc.source.conferencedateSEP 01-03, 2021
dc.source.conferencelocationCaen
dc.source.journalna
dc.source.numberofpages4
dc.subject.keywordsJUNCTIONLESS
dc.title

On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact

dc.typeProceedings paper
dspace.entity.typePublication
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