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HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition
Publication:
HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition
Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
dimoulas, A.
;
Mavrou, G.
;
Vellianitis, G.
;
Evangelou, E.
;
Boukos, N.
;
Houssa, Michel
;
Caymax, Matty
Journal
Applied Physics Letters
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1928
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1928
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations