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Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2 gate dielectric stacks
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Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2 gate dielectric stacks
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Date
2001
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Houssa, Michel
;
Stesmans, Andre
;
Heyns, Marc
Journal
Semiconductor Science and Technology
Abstract
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1848
since deposited on 2021-10-14
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last month
Acq. date: 2025-12-17
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Metrics
Views
1848
since deposited on 2021-10-14
2
last month
Acq. date: 2025-12-17
Citations