Publication:

Drive current improvement in Si tunnel field effect transistors by means of silicide engineering

Date

2010
Proceedings Paper
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dc.contributor.authorLeonelli, Daniele
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVerhulst, Anne
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-18T18:10:17Z
dc.date.available2021-10-18T18:10:17Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17470
dc.source.beginpage693
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate22/09/2010
dc.source.conferencelocationTokyo Japan
dc.source.endpage694
dc.title

Drive current improvement in Si tunnel field effect transistors by means of silicide engineering

dc.typeProceedings paper
dspace.entity.typePublication
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