Publication:

Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line

Date

2004
Proceedings Paper
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dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorKubicek, Stefan
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorLujan, Guilherme
dc.contributor.authorKunnen, Eddy
dc.contributor.authorSleeckx, Erik
dc.contributor.authorTeerlinck, I
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.contributor.authorLindsay, Richard
dc.contributor.authorSatta, Alessandra
dc.contributor.authorSchram, Tom
dc.contributor.authorChiarella, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRichard, Olivier
dc.contributor.authorConard, Thierry
dc.contributor.authorPoortmans, Jef
dc.contributor.authorWinderickx, Gillis
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorWinderickx, Gillis
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.accessioned2021-10-15T14:53:02Z
dc.date.available2021-10-15T14:53:02Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9300
dc.source.beginpage693
dc.source.conferenceSiGe: Materials, Processing, and Devices. Proceedings of the 1st International Sympsoium
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage700
dc.title

Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line

dc.typeProceedings paper
dspace.entity.typePublication
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