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Influence of thermal anneal steps on the current collapse of Fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

Date

2009
Journal article
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dc.contributor.authorLorenz, Anne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-18T00:13:18Z
dc.date.available2021-10-18T00:13:18Z
dc.date.issued2009
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15751
dc.identifier.urlhttp://www3.interscience.wiley.com/journal/122254958/abstract
dc.source.beginpageS996
dc.source.endpageS998
dc.source.issueS2
dc.source.journalPhysica Status Solidi C
dc.source.volume6
dc.title

Influence of thermal anneal steps on the current collapse of Fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

dc.typeJournal article
dspace.entity.typePublication
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