γ-irradiation hardness of short channel NMOSFETs fabricated in a 0.5 µm SOI technology

dc.contributor.author	Claeys, C.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Efremov, A.
dc.contributor.author	Litovchenko, V. G.
dc.contributor.author	Evtuth, A.
dc.contributor.author	Kizjak, A.
dc.contributor.author	Rassamakin, J.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-14T16:42:08Z
dc.date.available	2021-10-14T16:42:08Z
dc.date.issued	2001
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/5147
dc.source.conference	Symposium B of the E-MRS Spring Meeting 2001: Defect Engineering of Advanced Semiconductor Devices;
dc.source.conferencelocation
dc.title	γ-irradiation hardness of short channel NMOSFETs fabricated in a 0.5 µm SOI technology
dc.type	Oral presentation
dspace.entity.type	Publication
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