Theoretical study of carrier transport in supported and gated two-dimensional transition metal dichalcogenides

dc.contributor.author	Gopalan, Sanjay
dc.contributor.author	Van de Put, Maarten
dc.contributor.author	Gaddemane, Gautam
dc.contributor.author	Fischetti, Massimo V.
dc.contributor.imecauthor	Van de Put, Maarten
dc.contributor.imecauthor	Gaddemane, Gautam
dc.contributor.orcidimec	Van de Put, Maarten::0000-0001-9179-6443
dc.contributor.orcidimec	Gaddemane, Gautam::0000-0003-0067-8674
dc.date.accessioned	2023-06-30T08:50:20Z
dc.date.available	2023-01-23T03:17:51Z
dc.date.available	2023-06-30T08:50:20Z
dc.date.issued	2023
dc.description.wosFundingText	This work has been funded by the Semiconductor Research Corporation (SRC) nCORE/NEWLIMITS program and, in part, by the Taiwan Semiconductor Manufacturing Company Ltd. (TSMC).
dc.identifier.doi	10.1016/j.sse.2022.108509
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/41020
dc.publisher	PERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage	Art.: 108509
dc.source.endpage	na
dc.source.issue	February
dc.source.journal	SOLID-STATE ELECTRONICS
dc.source.numberofpages	4
dc.source.volume	200
dc.subject.keywords	INSULATOR
dc.subject.keywords	MOBILITY
dc.title	Theoretical study of carrier transport in supported and gated two-dimensional transition metal dichalcogenides
dc.type	Journal article
dspace.entity.type	Publication
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