Publication:

In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI

Date

2025-APR 28
Journal article
https://doi.org/10.1021/acsaelm.5c00383
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dc.contributor.authorKruv, Anastasiia
dc.contributor.authorvan Setten, Michiel J.
dc.contributor.authorChasin, Adrian
dc.contributor.authorMatsubayashi, Daisuke
dc.contributor.authorDekkers, Hendrik F. W.
dc.contributor.authorPavel, Alexandru
dc.contributor.authorWan, Yiqun
dc.contributor.authorTrivedi, Kruti
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorLi, Jie
dc.contributor.authorJiang, Yuchao
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorKruv, Anastasiia
dc.contributor.imecauthorvan Setten, Michiel J.
dc.contributor.imecauthorChasin, Adrian
dc.contributor.imecauthorMatsubayashi, Daisuke
dc.contributor.imecauthorDekkers, Hendrik F. W.
dc.contributor.imecauthorPavel, Alexandru
dc.contributor.imecauthorWan, Yiqun
dc.contributor.imecauthorTrivedi, Kruti
dc.contributor.imecauthorRassoul, Nouredine
dc.contributor.imecauthorLi, Jie
dc.contributor.imecauthorJiang, Yuchao
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecKruv, Anastasiia::0000-0002-0210-4941
dc.contributor.orcidimecMatsubayashi, Daisuke::0000-0002-2332-2569
dc.contributor.orcidimecPavel, Alexandru::0009-0005-7802-6950
dc.contributor.orcidimecWan, Yiqun::0009-0003-9520-9631
dc.contributor.orcidimecTrivedi, Kruti::0000-0002-1563-3324
dc.contributor.orcidimecRassoul, Nouredine::0000-0001-9489-3396
dc.contributor.orcidimecLi, Jie::0009-0005-0093-537X
dc.contributor.orcidimecJiang, Yuchao::0009-0004-6729-9526
dc.contributor.orcidimecSubhechha, Subhali::0000-0002-1960-5136
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecBelmonte, Attilio::0000-0002-3947-1948
dc.date.accessioned2025-05-11T05:42:54Z
dc.date.available2025-05-11T05:42:54Z
dc.date.issued2025-APR 28
dc.description.wosFundingTextThis work was funded by the imec industry-affiliated Active Memory program and has been enabled in part by the NanoIC pilot line. The acquisition and operation are jointly funded by the Chips Joint Undertaking through the European Union's Digital Europe (101183266) and Horizon Europe programs (101183277), as well as by the participating states: Belgium (Flanders), France, Germany, Finland, Ireland, and Romania. For more information, visit nanoic-project.eu. We thank the imec FAB, Amsimec, and MSP teams.
dc.identifier.doi10.1021/acsaelm.5c00383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45636
dc.publisherAMER CHEMICAL SOC
dc.source.journalACS APPLIED ELECTRONIC MATERIALS
dc.source.numberofpages10
dc.subject.keywordsAXIS-ALIGNED CRYSTALLINE
dc.subject.keywordsTHIN-FILM-TRANSISTOR
dc.subject.keywordsCOMPOSITION RATIO
dc.subject.keywordsDENSITY
dc.subject.keywordsPSEUDOPOTENTIALS
dc.title

In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI

dc.typeJournal article
dspace.entity.typePublication
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