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III-Nitrides electronics at IMEC: latest developments on SiC and large diameter Si substrates

Date

2007
Proceedings Paper
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dc.contributor.authorGermain, Marianne
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDerluyn, Joff
dc.contributor.authorLeys, Maarten
dc.contributor.authorDas, Jo
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorCheng, Kai
dc.contributor.authorLorenz, Anne
dc.contributor.authorXiao, Dongping
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.date.accessioned2021-10-16T16:14:41Z
dc.date.available2021-10-16T16:14:41Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12188
dc.source.beginpage337
dc.source.conference31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate20/05/2007
dc.source.conferencelocationVenice Italy
dc.source.endpage341
dc.title

III-Nitrides electronics at IMEC: latest developments on SiC and large diameter Si substrates

dc.typeProceedings paper
dspace.entity.typePublication
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