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Comparison of the total dose and 60MeV proton-irradiation response of CMOS transistors operated at 4.2K

Date

2000
Proceedings Paper
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMohammadzadeh, A.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T13:46:45Z
dc.date.available2021-10-14T13:46:45Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4745
dc.source.beginpage535
dc.source.conference1999 5th European Conference on Radiation and its Effects on Components and Systems - RADECS
dc.source.conferencedate13/09/1999
dc.source.conferencelocationAbbaye de Fontevraud France
dc.source.endpage541
dc.title

Comparison of the total dose and 60MeV proton-irradiation response of CMOS transistors operated at 4.2K

dc.typeProceedings paper
dspace.entity.typePublication
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