Publication:

High performance and stable Au-free AlGaN/GaN lateral power diode on 200-mm silicon substrate

Date

2016
Meeting abstract
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dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorPalacios, Tomas
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-23T11:22:35Z
dc.date.available2021-10-23T11:22:35Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26747
dc.source.beginpage18
dc.source.conferenceMTL Annual Research Conference
dc.source.conferencedate20/01/2016
dc.source.conferencelocationBretton Woods USA
dc.title

High performance and stable Au-free AlGaN/GaN lateral power diode on 200-mm silicon substrate

dc.typeMeeting abstract
dspace.entity.typePublication
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